February 23, 2012
Toshiba Corp. on Feb. 23 announced breakthroughs in NAND flash technology that secure major advances in chip density and performance.
January 06, 2012
Toshiba Corp. announced in Tokyo on Jan. 6 the development of Benand, a multi-application single level cell (SLC) NAND flash memory with an embedded error correction code (ECC).
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